Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures
نویسندگان
چکیده
Abstract Understanding the energy alignment of electronic bands, which originate from ultrathin MoS 2 layers and metal electrodes attached to them, is crucial for design -based devices. We have applied internal photoemission spectroscopy (IPE) analyze this alignment. demonstrate that IPE can yield barrier heights in metal/ two-dimensional semiconductor/insulator stacks when top electrode sufficiently thin allowing both photoexcitation electrons their transport towards insulator. The electron at interface between Al monolayer (1ML) estimated 0.7 eV, value explains experimentally observed attenuated quantum contribution aluminum. Based on relative energies low-energy threshold position Fermi level aluminum with SiO insulator, we provide a simple explanation current photoinjection 1ML .
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ژورنال
عنوان ژورنال: Journal of Physics D
سال: 2021
ISSN: ['1361-6463', '0022-3727']
DOI: https://doi.org/10.1088/1361-6463/abfb1b